Variations in microstructure and composition of indium tin oxide films with the deposition technique
Identifieur interne : 000010 ( Main/Exploration ); précédent : 000009; suivant : 000011Variations in microstructure and composition of indium tin oxide films with the deposition technique
Auteurs : RBID : ISTEX:10853_1996_Article_BF00356253.pdfAbstract
Indium tin oxide (ITO) films have been deposited by reactive d.c.-sputtering and also by the reactive thermal evaporation technique onto glass substrates. The relationship between the microstructure and composition of the ITO films was found to strongly depend on the deposition technique. In addition the application of pure water vapour as the reactive sputtering atmosphere and its influence on the structural and compositional properties of the ITO films has been studied.X-ray diffraction investigations showed that all the films exhibited the bixbite structure of In2O3. No other crystalline phases were observed. Highly crystallized ITO films have been obtained using the reactive thermal evaporation technique. These films show a large average grain size of about 80 nm and a very homogeneous morphology. In contrast the d.c.-sputtered ITO films have a smaller average grain size and a characteristic texture. All deposited ITO films show an enlarged lattice constant compared to that of In2O3. A strong dependence of the chemical composition of the ITO films on the deposition technique and parameters was detected.
DOI: 10.1007/BF00356253
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Hennig</name><affiliation wicri:level="3"><mods:affiliation>Institut für Physikalische und Theoretische Chemie, Humboldt-Universität zu Berlin, Bunsenstraße 1, D-10117, Berlin, Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Institut für Physikalische und Theoretische Chemie, Humboldt-Universität zu Berlin, Bunsenstraße 1, D-10117, Berlin</wicri:regionArea><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name>B. Ziemer</name><affiliation wicri:level="3"><mods:affiliation>Institut für Physikalische und Theoretische Chemie, Humboldt-Universität zu Berlin, Bunsenstraße 1, D-10117, Berlin, Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Institut für Physikalische und Theoretische Chemie, Humboldt-Universität zu Berlin, Bunsenstraße 1, D-10117, Berlin</wicri:regionArea><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name>R. Kalähne</name><affiliation wicri:level="3"><mods:affiliation>Institut für Physikalische und Theoretische Chemie, Humboldt-Universität zu Berlin, Bunsenstraße 1, D-10117, Berlin, Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Institut für Physikalische und Theoretische Chemie, Humboldt-Universität zu Berlin, Bunsenstraße 1, D-10117, Berlin</wicri:regionArea><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name>K. H. Heckner</name><affiliation wicri:level="3"><mods:affiliation>Institut für Physikalische und Theoretische Chemie, Humboldt-Universität zu Berlin, Bunsenstraße 1, D-10117, Berlin, Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Institut für Physikalische und Theoretische Chemie, Humboldt-Universität zu Berlin, Bunsenstraße 1, D-10117, Berlin</wicri:regionArea><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:10853_1996_Article_BF00356253.pdf</idno><date when="1996">1996</date><idno type="doi">10.1007/BF00356253</idno><idno type="wicri:Area/Main/Corpus">000679</idno><idno type="wicri:Area/Main/Curation">000679</idno><idno type="wicri:Area/Main/Exploration">000010</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">Indium tin oxide (ITO) films have been deposited by reactive d.c.-sputtering and also by the reactive thermal evaporation technique onto glass substrates. The relationship between the microstructure and composition of the ITO films was found to strongly depend on the deposition technique. In addition the application of pure water vapour as the reactive sputtering atmosphere and its influence on the structural and compositional properties of the ITO films has been studied.X-ray diffraction investigations showed that all the films exhibited the bixbite structure of In2O3. No other crystalline phases were observed. Highly crystallized ITO films have been obtained using the reactive thermal evaporation technique. These films show a large average grain size of about 80 nm and a very homogeneous morphology. In contrast the d.c.-sputtered ITO films have a smaller average grain size and a characteristic texture. All deposited ITO films show an enlarged lattice constant compared to that of In2O3. A strong dependence of the chemical composition of the ITO films on the deposition technique and parameters was detected.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="74f1284345d78ee2a7a1b5124081a679e5ec0766"><titleInfo lang="eng"><title>Variations in microstructure and composition of indium tin oxide films with the deposition technique</title></titleInfo><name type="personal"><namePart type="given">M.</namePart><namePart type="family">Rottmann</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Institut für Physikalische und Theoretische Chemie, Humboldt-Universität zu Berlin, Bunsenstraße 1, D-10117, Berlin, Germany</affiliation></name><name type="personal"><namePart type="given">H.</namePart><namePart type="family">Hennig</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Institut für Physikalische und Theoretische Chemie, Humboldt-Universität zu Berlin, Bunsenstraße 1, D-10117, Berlin, Germany</affiliation></name><name type="personal"><namePart type="given">B.</namePart><namePart type="family">Ziemer</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Institut für Physikalische und Theoretische Chemie, Humboldt-Universität zu Berlin, Bunsenstraße 1, D-10117, Berlin, Germany</affiliation></name><name type="personal"><namePart type="given">R.</namePart><namePart type="family">Kalähne</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Institut für Physikalische und Theoretische Chemie, Humboldt-Universität zu Berlin, Bunsenstraße 1, D-10117, Berlin, Germany</affiliation></name><name type="personal"><namePart type="given">K. H.</namePart><namePart type="family">Heckner</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Institut für Physikalische und Theoretische Chemie, Humboldt-Universität zu Berlin, Bunsenstraße 1, D-10117, Berlin, Germany</affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Kluwer Academic Publishers, Dordrecht</publisher><dateCreated encoding="w3cdtf">1995-09-15</dateCreated><dateCaptured encoding="w3cdtf">1996-01-15</dateCaptured><dateValid encoding="w3cdtf">2004-09-04</dateValid><copyrightDate encoding="w3cdtf">1996</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">Indium tin oxide (ITO) films have been deposited by reactive d.c.-sputtering and also by the reactive thermal evaporation technique onto glass substrates. The relationship between the microstructure and composition of the ITO films was found to strongly depend on the deposition technique. In addition the application of pure water vapour as the reactive sputtering atmosphere and its influence on the structural and compositional properties of the ITO films has been studied.X-ray diffraction investigations showed that all the films exhibited the bixbite structure of In2O3. No other crystalline phases were observed. Highly crystallized ITO films have been obtained using the reactive thermal evaporation technique. These films show a large average grain size of about 80 nm and a very homogeneous morphology. In contrast the d.c.-sputtered ITO films have a smaller average grain size and a characteristic texture. All deposited ITO films show an enlarged lattice constant compared to that of In2O3. A strong dependence of the chemical composition of the ITO films on the deposition technique and parameters was detected.</abstract><relatedItem type="series"><titleInfo type="abbreviated"><title>JOURNAL OF MATERIALS SCIENCE</title></titleInfo><titleInfo><title>Journal of Materials Science</title><partNumber>Year: 1996</partNumber><partNumber>Volume: 31</partNumber><partNumber>Number: 24</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1996-01-01</dateIssued><copyrightDate encoding="w3cdtf">1996</copyrightDate></originInfo><subject usage="primary"><topic>Engineering</topic><topic>Polymer Sciences</topic><topic>Industrial Chemistry/Chemical Engineering</topic><topic>Mechanics</topic><topic>Materials Processing, Characterization, and Design</topic></subject><identifier type="issn">0022-2461</identifier><identifier type="issn">Electronic: 1573-4803</identifier><identifier type="matrixNumber">10853</identifier><identifier type="local">IssueArticleCount: 39</identifier><recordInfo><recordOrigin>Chapman & Hall, 1996</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF00356253</identifier><identifier type="matrixNumber">Art14</identifier><identifier type="local">BF00356253</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>6495</start><end>6500</end></extent></part><recordInfo><recordOrigin>Chapman & Hall, 1996</recordOrigin><recordIdentifier>10853_1996_Article_BF00356253.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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